High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.
about
Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.Atomically engineered electron spin lifetimes of 30 s in silicon.High-Fidelity Single-Shot Singlet-Triplet Readout of Precision-Placed Donors in Silicon.Two-electron spin correlations in precision placed donors in silicon.Charge sensing of a few-donor double quantum dot in silicon
P2860
High-Fidelity Rapid Initialization and Read-Out of an Electron Spin via the Single Donor D(-) Charge State.
description
2015 nî lūn-bûn
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2015年の論文
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2015年学术文章
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name
High-Fidelity Rapid Initializa ...... on Spin via the Single Donor D
@nl
High-Fidelity Rapid Initializa ...... ingle Donor D(-) Charge State.
@en
type
label
High-Fidelity Rapid Initializa ...... on Spin via the Single Donor D
@nl
High-Fidelity Rapid Initializa ...... ingle Donor D(-) Charge State.
@en
prefLabel
High-Fidelity Rapid Initializa ...... on Spin via the Single Donor D
@nl
High-Fidelity Rapid Initializa ...... ingle Donor D(-) Charge State.
@en
P2860
P50
P1476
High-Fidelity Rapid Initializa ...... Single Donor D(-) Charge State
@en
P2093
P2860
P304
P356
10.1103/PHYSREVLETT.115.166806
P407
P577
2015-10-16T00:00:00Z