Memory effects in complex materials and nanoscale systems
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Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory designNanobatteries in redox-based resistive switches require extension of memristor theoryEngineering nonlinearity into memristors for passive crossbar applicationsA hybrid living/organic electrochemical transistor based on the Physarum polycephalum cell endowed with both sensing and memristive properties.Layered memristive and memcapacitive switches for printable electronics.Two centuries of memristors.The Missing Memristor has Not been Found.Stability and conductivity of self assembled wires in a transverse electric field.Memory elements in the electrical network of Mimosa pudica L.Emulating short-term synaptic dynamics with memristive devicesResistive Switching Memory Phenomena in PEDOT PSS: Coexistence of Switchable Diode Effect and Write Once Read Many MemoryMemristive Sisyphus circuit for clock signal generation.Coexistence of high performance resistance and capacitance memory based on multilayered metal-oxide structures.Spin memristive magnetic tunnel junctions with CoO-ZnO nano composite barrier.Quantum Memristors with Superconducting CircuitsMemory impedance in TiO2 based metal-insulator-metal devices.Solving mazes with memristors: a massively parallel approach.Coupling Resistive Switching Devices with Neurons: State of the Art and Perspectives.A single-device universal logic gate based on a magnetically enhanced memristor.Scaling effect on unipolar and bipolar resistive switching of metal oxides.Polynomial-time solution of prime factorization and NP-complete problems with digital memcomputing machines.Memristive stochastic plasticity enables mimicking of neural synchrony: Memristive circuit emulates an optical illusion.Frequency selectivity in pulse responses of Pt/poly(3-hexylthiophene-2,5-diyl)/polyethylene oxide +Li+/Pt hetero-junction.Arithmetic and biologically-inspired computing using phase-change materials.Universal electric-field-driven resistive transition in narrow-gap Mott insulators.Conducting-insulating transition in adiabatic memristive networks.Complex dynamics of memristive circuits: Analytical results and universal slow relaxation.Changing the state of a memristive system with white noise.Switching synchronization in one-dimensional memristive networks: An exact solution.A Collective Study on Modeling and Simulation of Resistive Random Access Memory.Locality of interactions for planar memristive circuits.The memristive effect as a novelty in drug monitoring.Switching synchronization in one-dimensional memristive networks.A bioinspired associative memory system based on enzymatic cascades.Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices.Driving knots on DNA with AC/DC electric fields: topological friction and memory effects.A fast operation of nanometer-scale metallic memristors: highly transparent conductance channels in Ag2S devices.Kondo memory in driven strongly correlated quantum dots.Self-organization and solution of shortest-path optimization problems with memristive networks.Generalized Floquet theory: application to dynamical systems with memory and Bloch's theorem for nonlocal potentials.
P2860
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P2860
Memory effects in complex materials and nanoscale systems
description
wetenschappelijk artikel
@nl
наукова стаття, опублікована у квітні 2011
@uk
name
Memory effects in complex materials and nanoscale systems
@en
Memory effects in complex materials and nanoscale systems
@nl
type
label
Memory effects in complex materials and nanoscale systems
@en
Memory effects in complex materials and nanoscale systems
@nl
prefLabel
Memory effects in complex materials and nanoscale systems
@en
Memory effects in complex materials and nanoscale systems
@nl
P2860
P1433
P1476
Memory effects in complex materials and nanoscale systems
@en
P2093
Massimiliano Di Ventra
Yuriy V. Pershin
P2860
P304
P356
10.1080/00018732.2010.544961
P407
P577
2011-04-01T00:00:00Z